Luminescence properties of Eu-implanted GaN-based semiconductors
نویسندگان
چکیده
منابع مشابه
Annealing behavior of luminescence from erbium-implanted GaN films
We have conducted a systematic study of the bandedge and infrared luminescence properties of Er-implanted GaN thin films. The GaN films, grown by metalorganic chemical vapor deposition, were co-implanted with Er and O ions. After implantation, the implanted samples were furnace annealed at temperatures up to 1100°C. Following annealing, the samples were examined for both bandedge luminescence a...
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In 1996, Matsuzawa et al. reported on the enormously long-lasting afterglow of SrAl2O4: Eu 2+ co-doped with Dy ions, which was more than 10-times brighter than the previously widely used ZnS: Cu. Since then, research for stable and efficient phosphors has constantly gained attractiveness. However, even today almost 15 years after the invention of SrAl2O4: Eu 2+ the number of luminescent materia...
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Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6596
DOI: 10.1088/1742-6596/165/1/012026